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1PS70SB10 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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1PS70SB10 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 26 3 Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT323 (SC70) standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp <10ms − 600 mA Ptot total power dissipation (per package) Tamb <25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR continuous reverse current VR = 25 V; note 1; see Fig.7 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.8 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W |
Numéro de pièce similaire - 1PS70SB10 |
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Description similaire - 1PS70SB10 |
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