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BAP65-05W Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAP65-05W Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 May 07 4 Philips Semiconductors Product specification Silicon PIN diode BAP65-05W GRAPHICAL DATA handbook, halfpage 10 1 10−1 MGW097 10−1 110 IF (mA) rD ( Ω) 102 Fig.2 Forward resistance as a function of the forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 1000 0 200 MGW098 400 600 800 4 8 12 16 VR (V) Cd (fF) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0123 0 −0.1 −0.3 −0.5 −0.4 −0.2 MGW099 f (GHz) |s21| 2 (dB) (1) (4) (3) (2) Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. Fig.4 Insertion loss ( |s21|2) of the diode in on-state as a function of frequency; typical values. (1) IF = 100 mA. (2) IF =10mA. (3) IF = 5 mA. (4) IF = 1 mA. handbook, halfpage 0123 0 −10 −30 −40 −20 MGW100 f (GHz) |s21| 2 (dB) Fig.5 Isolation ( |s21|2) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
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Description similaire - BAP65-05W |
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