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PBYR745X Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PBYR745X
Description  Rectifier diodes Schottky barrier
Download  6 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR745X Fiches technique(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745F, PBYR745X series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV));
sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current; I
R = f(VR);
parameter T
j
Fig.5. Typical junction capacitance; C
d = f(VR);
f = 1 MHz; T
j = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance; Z
th j-hs = f(tp).
02468
10
12
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
PBYR745X
Rs = 0.02 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
D =
tp
tp
T
T
t
I
Ths(max) / C
150
144.5
139
133.5
128
122.5
117
111.5
106
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR745
50 C
75 C
100 C
125 C
Tj = 25 C
0123456
78
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
PBYR745X
Rs = 0.02 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) / C
150
144.5
139
133.5
128
122.5
117
111.5
106
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR745
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR745
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR745X
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
tp
tp
T
T
P
t
D
July 1998
3
Rev 1.200


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