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PBYR745F Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce PBYR745F
Description  Rectifier diodes Schottky barrier
Download  6 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR745F Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745F, PBYR745X series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 7.5 A
• Isolated mounting tab
V
F ≤ 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR745F series is supplied in the SOD100 package.
The PBYR745X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40F
45F
PBYR7
40X
45X
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
hs ≤ 103 ˚C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
hs ≤ 123 ˚C
-
7.5
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
hs ≤ 123 ˚C
-
15
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
k
a
12
12
case
12
case
July 1998
1
Rev 1.200


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