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PBYR3045PTF Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce PBYR3045PTF
Description  Rectifier diodes schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR3045PTF Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PTF series
schottky barrier
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
PBYR30-
35PTF 40PTF
45PTF
low
forward
voltage
drop
and
V
RRM
Repetitive peak reverse
35
40
45
V
absence of stored charge. These
voltage
devices
can
withstand
reverse
V
F
Forward voltage
0.65
0.65
0.65
V
voltage
transients
and
have
I
O(AV)
Output current (both
20
20
20
A
guaranteed reverse surge capability.
diodes conducting)
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-35
-40
-45
V
RRM
Repetitive peak reverse voltage
-
35
40
45
V
V
RWM
Crest working reverse voltage
-
35
40
45
V
V
R
Continuous reverse voltage
T
hs ≤ 113 ˚C
-
35
40
45
V
I
O(AV)
Output current (both diodes
square wave;
δ = 0.5;
-
20
A
conducting)
T
hs ≤ 109 ˚C
I
O(RMS)
RMS forward current
-
20
A
I
FRM
Repetitive peak forward current t = 25
µs; δ = 0.5;
-
30
A
per diode
T
hs ≤ 109 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current per diode.
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
91
A
2s
I
RRM
Repetitive peak reverse current t
p = 2 µs; δ = 0.001
-
2
A
per diode.
I
RSM
Non-repetitive peak reverse
t
p = 100 µs-
2
A
current per diode.
T
stg
Storage temperature
-65
175
˚C
T
j
Operating junction temperature
-
150
˚C
12
3
case
k
a1
a2
1
2
3
August 1996
1
Rev 1.100


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