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PBYR3045PT Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PBYR3045PT
Description  Rectifier diodes schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR3045PT Fiches technique(HTML) 3 Page - NXP Semiconductors

  PBYR3045PT Datasheet HTML 1Page - NXP Semiconductors PBYR3045PT Datasheet HTML 2Page - NXP Semiconductors PBYR3045PT Datasheet HTML 3Page - NXP Semiconductors PBYR3045PT Datasheet HTML 4Page - NXP Semiconductors PBYR3045PT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb = f(tp).
0
5
10
15
20
25
0
5
10
15
PBYR1645
IF(AV) / A
PF / W
D = 1.0
0.5
0.2
0.1
150
143
136
129
Tmb(max) / C
D =
tp
tp
T
T
t
I
Vo = 0.302
Rs = 0.012
0
25
50
100
10
1
0.1
0.01
IR / mA
VR/ V
PBYR1645
75 C
100 C
125 C
150 C
Tj = 50 C
0
5
10
15
0
2
4
6
8
10
12
a = 1.57
1.9
2.8
4
PBYR1645
IF(AV) / A
PF / W
Tmb(max) / C
150
147.2
144.4
141.6
138.8
136
133.2
2.2
Vo = 0.302
Rs = 0.012
1
10
100
100
10000
1000
Cd / pF
VR / V
PBYR1645
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR1645
VF / V
IF / A
Tj = 25 C
Tj = 125 C
typ
max
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
tp
t
D
August 1996
3
Rev 1.100


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