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PBYR3045PT Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PBYR3045PT
Description  Rectifier diodes schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR3045PT Fiches technique(HTML) 2 Page - NXP Semiconductors

  PBYR3045PT Datasheet HTML 1Page - NXP Semiconductors PBYR3045PT Datasheet HTML 2Page - NXP Semiconductors PBYR3045PT Datasheet HTML 3Page - NXP Semiconductors PBYR3045PT Datasheet HTML 4Page - NXP Semiconductors PBYR3045PT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
1.4
K/W
mounting base
both diodes
-
-
1.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
45
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F = 20 A; Tj = 125˚C
-
0.55
0.60
V
I
F = 30 A; Tj = 125˚C
-
0.67
0.72
V
I
F = 30 A
-
0.71
0.76
I
R
Reverse current (per diode)
V
R = VRWM
-
100
200
µA
V
R = VRWM; Tj = 125 ˚C
-
12
40
mA
C
d
Junction capacitance (per
f = 1MHz; V
R = 5V; Tj = 25 ˚C to
-
800
-
pF
diode)
125 ˚C
August 1996
2
Rev 1.100


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