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PBYR30100WT Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PBYR30100WT
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR30100WT Fiches technique(HTML) 3 Page - NXP Semiconductors

  PBYR30100WT Datasheet HTML 1Page - NXP Semiconductors PBYR30100WT Datasheet HTML 2Page - NXP Semiconductors PBYR30100WT Datasheet HTML 3Page - NXP Semiconductors PBYR30100WT Datasheet HTML 4Page - NXP Semiconductors PBYR30100WT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR30100WT series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
per diode; I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb = f(tp).
0
20
PBYR30100PT
IF(AV) / A
PF / W
20
15
10
5
0
Vo = 0.550 V
Rs = 0.010 Ohms
Tmb(max) / C
150
143
136
129
122
10
26
D = 1.0
0.5
0.2
0.1
D =
tp
tp
T
T
I
t
10
30
50
70
90
100
10
1
0.1
0.01
IR/ mA
VR/ V
PBYR30100PT
20
40
60
80
100
Tj/ C = 150
125
100
75
50
0
10
PBYR30100
IF(AV) / A
PF / W
15
10
5
0
a = 1.57
1.9
2.2
2.8
4
Vo = 0.550 V
Rs = 0.010 Ohms
515
150
143
136
129
Tmb(max) / C
1
10
100
10000
1000
100
10
Cd/ pF
VR/ V
PBYR30100PT
0
1
2
PBYR30100PT
VF / V
IF / A
100
80
60
40
20
0
0.5
1.5
Tj = 25 C
Tj = 125 C
Typ
Max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR30100WT
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
tp
T
T
P
t
D
November 1998
3
Rev 1.300


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