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PBYR30100WT Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PBYR30100WT
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR30100WT Fiches technique(HTML) 2 Page - NXP Semiconductors

  PBYR30100WT Datasheet HTML 1Page - NXP Semiconductors PBYR30100WT Datasheet HTML 2Page - NXP Semiconductors PBYR30100WT Datasheet HTML 3Page - NXP Semiconductors PBYR30100WT Datasheet HTML 4Page - NXP Semiconductors PBYR30100WT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR30100WT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F = 15 A; Tj = 125˚C
-
0.61
0.7
V
I
F = 30 A; Tj = 125˚C
-
0.74
0.85
V
I
F = 15 A
-
0.77
0.85
V
I
R
Reverse current
V
R = VRWM
-
5
150
µA
V
R = VRWM; Tj = 125˚C
-
5
15
mA
C
d
Junction capacitance
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
600
-
pF
November 1998
2
Rev 1.300


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