Moteur de recherche de fiches techniques de composants électroniques |
|
TPS62353YZGR Fiches technique(PDF) 3 Page - Texas Instruments |
|
|
TPS62353YZGR Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 46 page www.ti.com DISSIPATION RATINGS (1) ELECTRICAL CHARACTERISTICS TPS62350, TPS62351 TPS62352, TPS62353, TPS62354 SLVS540B – MAY 2006 – REVISED DECEMBER 2006 POWER RATING DERATING FACTOR PACKAGE RθJA (2) FOR TA ≤ 25°C ABOVE TA = 25°C DRC 49 °C/W 2050 mW 21 mW/ °C YZG 110 °C/W 900 mW 9 mW/ °C (1) Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = [TJ(max) – TA] / θJA. (2) This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard). over operating free-air temperature range, typical values are at T A = 25°C. Unless otherwise noted, specifications apply with V I = 3.6 V, EN = VI, VSEL = VI, SYNC = GND, VSEL0[6] bit = 1. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT IO = 0 mA, Fast PFM mode enabled 110 150 µA Device not switching IQ Operating quiescent current IO = 0 mA, Light PFM mode enabled 28 45 µA Device not switching IO = 0 mA, 3-MHz PWM mode operation 4.8 mA EN = GND, EN_DCDC bit = X 0.1 2 µA I(SD) Shutdown current EN = VI, EN_DCDC bit = 0 6.5 µA V(UVLO) Undervoltage lockout threshold 2.20 2.3 V ENABLE, VSEL, SDA, SCL, SYNC VIH High-level input voltage 1.2 V VIL Low-level input voltage 0.4 V Ilkg Input leakage current Input tied to GND or VI 0.01 1 µA POWER SWITCH VI = V(GS) = 3.6 V, YZG package 250 500 rDS(on) P-channel MOSFET on resistance VI = V(GS) = 3.6 V, DRC package 275 500 m Ω VI = V(GS) = 2.7 V, DRC package 350 750 Ilkg P-channel leakage current V(DS) = 6 V 1 µA VI = V(GS) = 3.6 V, YZG package 150 350 rDS(on) N-channel MOSFET on resistance VI = V(GS) = 3.6 V, DRC package 165 350 m Ω VI = V(GS) = 2.7 V, DRC package 210 500 Ilkg N-channel leakage current V(DS) = 6 V 1 µA R(DIS) Discharge resistor for power-down sequence 15 50 Ω P-MOS current limit 2.7 V ≤ V I ≤ 5.5 V 1150 1350 1600 mA Sourcing 2.7 V ≤ V I ≤ 5.5 V 900 1100 1300 mA N-MOS current limit Sinking 2.7 V ≤ V I ≤ 5.5 V -500 -700 -900 mA Input current limit under short-circuit conditions VO = 0 V 675 mA Thermal shutdown 150 °C Thermal shutdown hysteresis 20 °C OSCILLATOR fSW Oscillator frequency CONTROL2[4:3] = 00 2.65 3 3.35 MHz f(SYNC) Synchronization range 2.65 3.35 MHz Duty cycle of external clock signal 20% 80% 3 Submit Documentation Feedback |
Numéro de pièce similaire - TPS62353YZGR |
|
Description similaire - TPS62353YZGR |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |