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PBYR1545CTF Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PBYR1545CTF
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1545CTF Fiches technique(HTML) 2 Page - NXP Semiconductors

  PBYR1545CTF Datasheet HTML 1Page - NXP Semiconductors PBYR1545CTF Datasheet HTML 2Page - NXP Semiconductors PBYR1545CTF Datasheet HTML 3Page - NXP Semiconductors PBYR1545CTF Datasheet HTML 4Page - NXP Semiconductors PBYR1545CTF Datasheet HTML 5Page - NXP Semiconductors PBYR1545CTF Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1545CTF, PBYR1545CTX series
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOT186 package; R.H.
≤ 65%; clean and
-
-
1500
V
all terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
-
-
2500
V
all terminals to external
sinusoidal waveform; R.H.
≤ 65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction
per diode
-
-
6
K/W
to heatsink
both diodes
-
-
5.2
K/W
(with heatsink compound)
R
th j-a
Thermal resistance junction
in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F = 7.5 A; Tj = 125˚C
-
0.44
0.57
V
I
F = 15 A; Tj = 125˚C
-
0.63
0.72
V
I
F = 15 A
-
0.62
0.84
V
I
R
Reverse current
V
R = VRWM
-
0.22
1
mA
V
R = VRWM; Tj = 100˚C
-
18
25
mA
C
d
Junction capacitance
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
270
-
pF
October 1998
2
Rev 1.300


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