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PBYR1545CT Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PBYR1545CT
Description  Rectifier diodes Schottky barrier
Download  6 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1545CT Fiches technique(HTML) 2 Page - NXP Semiconductors

  PBYR1545CT Datasheet HTML 1Page - NXP Semiconductors PBYR1545CT Datasheet HTML 2Page - NXP Semiconductors PBYR1545CT Datasheet HTML 3Page - NXP Semiconductors PBYR1545CT Datasheet HTML 4Page - NXP Semiconductors PBYR1545CT Datasheet HTML 5Page - NXP Semiconductors PBYR1545CT Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1545CT, PBYR1545CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
3
K/W
to mounting base
both diodes
-
-
2
K/W
R
th j-a
Thermal resistance junction
SOT78 package in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F = 7.5 A; Tj = 125˚C
-
0.44
0.57
V
I
F = 15 A; Tj = 125˚C
-
0.63
0.72
V
I
F = 15 A
-
0.62
0.84
V
I
R
Reverse current per diode
V
R = VRWM
-
0.22
1
mA
V
R = VRWM; Tj = 100˚C
-
18
25
mA
C
d
Junction capacitance per
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
270
-
pF
diode
October 1998
2
Rev 1.300


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