Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

FQA11N90C Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce FQA11N90C
Description  900V N-Channel MOSFET
Télécharger  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA11N90C Datasheet(HTML) 1 Page - Fairchild Semiconductor

  FQA11N90C Datasheet HTML 1Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 2Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 3Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 4Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 5Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 6Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 7Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 8Page - Fairchild Semiconductor FQA11N90C Datenblatt HTML 9Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 9 page
background image
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA11N90C Rev. A1
September 2006
QFET
®
FQA11N90C
900V N-Channel MOSFET
Features
• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GS
D
TO-3P
FQA Series
Symbol
Parameter
FQA11N90C
Units
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
11.0
A
- Continuous (TC = 100°C)
6.9
A
IDM
Drain Current
- Pulsed
(Note 1)
44.0
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
960
mJ
IAR
Avalanche Current
(Note 1)
11.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
300
W
- Derate above 25°C
2.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.42
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W


Html Pages

1  2  3  4  5  6  7  8  9 


Datasheet Download

Go To PDF Page


Lien URL



Privacy Policy
ALLDATASHEET.FR
AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicit   |   Contactez-nous   |   Politique de confidentialit   |   Echange de liens   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn