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FQA8N80C Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQA8N80C Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA8N80C Rev. A1 September 2006 QFET ® FQA8N80C 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3P FQA Series Symbol Parameter FQA8N80C Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 8.4 A - Continuous (TC = 100°C) 5.3 A IDM Drain Current - Pulsed (Note 1) 33.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ IAR Avalanche Current (Note 1) 8.4 A EAR Repetitive Avalanche Energy (Note 1) 22 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 220 W - Derate above 25°C 1.75 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.57 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
Numéro de pièce similaire - FQA8N80C_06 |
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Description similaire - FQA8N80C_06 |
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