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FQA8N80C Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce FQA8N80C
Description  800V N-Channel MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA8N80C Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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FQA8N80C Rev. A1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes:
1. V
GS =0V
2. I
D =250µA
T
J, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes:
1. V
GS = 10 V
2. I
D = 4.0 A
T
J, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µs
DC
10 ms
1 ms
100
µs
Operationin This Area
is Limitedby R
DS(on)
Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
T
C, Case Temperature [
]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N o te s :
1 . Z
θ JC (t) = 0 .5 7
/W M a x .
2 . D u ty F a c to r, D = t
1/t 2
3 . T
JM - T C = P DM * Z θ JC (t)
s in g le p u ls e
D= 0 .5
0.0 2
0.2
0.05
0.1
0.0 1
t
1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
t1
PDM
t2


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