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FQA8N80 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FQA8N80
Description  800V N-Channel MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA8N80 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FQA8N80 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22.6mH, IAS =8.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA8N80
FQA8N80
TO-3P
--
--
30
FQA8N80
FQA8N80_F109
TO-3PN
--
--
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.95
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
--
10
µA
VDS = 640 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA3.0
--
5.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4.2 A
--
0.94
1.2
gFS
Forward Transconductance
VDS = 50 V, ID = 4.2 A
(Note 4)
--
8.8
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1800
2350
pF
Coss
Output Capacitance
--
180
235
pF
Crss
Reverse Transfer Capacitance
--
20
26
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 400 V, ID = 8.4A,
RG = 25 Ω
(Note 4, 5)
--
40
90
ns
tr
Turn-On Rise Time
--
110
230
ns
td(off)
Turn-Off Delay Time
--
100
210
ns
tf
Turn-Off Fall Time
--
80
170
ns
Qg
Total Gate Charge
VDS = 640 V, ID = 8.4A,
VGS = 10 V
(Note 4, 5)
--
44
57
nC
Qgs
Gate-Source Charge
--
10
--
nC
Qgd
Gate-Drain Charge
--
20
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
33.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =8.4 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 8.4 A,
dIF / dt = 100 A/µs
(Note 4)
--
690
--
ns
Qrr
Reverse Recovery Charge
--
8.2
--
µC


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