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FQA7N80C Fiches technique(PDF) 3 Page - Fairchild Semiconductor

No de pièce FQA7N80C
Description  800V N-Channel MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA7N80C Fiches technique(HTML) 3 Page - Fairchild Semiconductor

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FQA7N80C Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
24
68
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 50V
2. 250µs PulseTest
V
GS, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
Notes :
1. 250µs PulseTest
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
0.20.4
0.60.8
1.01.2
1.4
10
-1
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250µs PulseTest
25℃
V
SD, Source-Drain voltage [V]
0
3
6
9
12
15
18
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS = 20V
V
GS = 10V
Note: T
J = 25℃
I
D, Drain Current [A]
10
-1
10
0
10
1
0
500
1000
1500
2000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes :
1. V
GS = 0 V
2. f =1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS = 400V
V
DS = 160V
V
DS = 640V
Note : I
D = 6.6A
Q
G, Total Gate Charge [nC]


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