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PBYL2025 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PBYL2025
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYL2025 Fiches technique(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYL2025 series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current; I
R = f(VR);
parameter T
j
Fig.5. Typical junction capacitance; C
d = f(VR);
f = 1 MHz; T
j = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance; Z
th j-mb = f(tp).
0
5
10
15
20
25
30
0
5
10
15
0.5
0.2
0.1
PBYL2025
D = 1.0
Rs = 0.00875 Ohms
Vo = 0.27 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
T
I
D =
tp
tp
T
t
142.5
135
127.5
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
1A
PBYR1625
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
0
5
10
15
20
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
PBYL2025
Rs = 0.00875 Ohms
Vo = 0.270 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
142.5
135
127.5
1
10
100
100
1000
10000
PBYR1625
VR / V
Cd / pF
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
50
PBYR1625
VF / V
IF / A
Tj = 25 C
Tj = 125 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYL1025
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
tp
T
T
P
t
D
March 1998
3
Rev 1.000


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