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PBYL1625B Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce PBYL1625B
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYL1625B Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYL1625B series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 20 V/ 25 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 16 A
• Low thermal resistance
V
F ≤ 0.46 V
GENERAL DESCRIPTION
PINNING
SOT404
Schottky rectifier diodes intended
PIN
DESCRIPTION
for use as output rectifiers in low
voltage, high frequency switched
1
no connection
mode power supplies.
2
cathode
1
The PBYL1625B series is supplied
in the SOT404 surface mounting
3
anode
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL16
20B
25B
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 120 ˚C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
16
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
32
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
1. It is not possible to make connection to pin 2 ofthe SOT404 package.
k
a
tab
3
13
tab
2
October 1998
1
Rev 1.100


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