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PBYL1625 Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce PBYL1625
Description  Rectifier diodes Schottky barrier
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYL1625 Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYL1625 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 20 V/ 25 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 16 A
• Low thermal resistance
V
F ≤ 0.46 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes intended
PIN
DESCRIPTION
for use as output rectifiers in low
voltage, high frequency switched
1
cathode
mode power supplies.
2
anode
The PBYL1625 series is supplied in
the
SOD59
(TO220AC)
tab
cathode
conventional leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL16
20
25
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 120 ˚C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
16
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
32
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
k
a
12
1
tab
2
March 1998
1
Rev 1.000


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