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FDS4672A Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDS4672A
Description  40V N-Channel PowerTrench짰 MOSFET
Download  6 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS4672A Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDS4672A_07 Datasheet HTML 1Page - Fairchild Semiconductor FDS4672A_07 Datasheet HTML 2Page - Fairchild Semiconductor FDS4672A_07 Datasheet HTML 3Page - Fairchild Semiconductor FDS4672A_07 Datasheet HTML 4Page - Fairchild Semiconductor FDS4672A_07 Datasheet HTML 5Page - Fairchild Semiconductor FDS4672A_07 Datasheet HTML 6Page - Fairchild Semiconductor  
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FDS4672A Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
40
V
ΔBVDSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
37
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
0.8
1.2
2.0
V
ΔVGS(th)
ΔT
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 μA, Referenced to 25°C
–4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 11 A
VGS=4.5 V, ID =11A, TJ=125°C
10
15
13
21
m
Ω
ID(on)
On–State Drain Current
VGS = 4.5 V, VDS = 5 V
50
A
gFS
Forward Transconductance
VDS = 5 V, ID = 11 A
65
S
Dynamic Characteristics
Ciss
Input Capacitance
4766
pF
Coss
Output Capacitance
346
pF
Crss
Reverse Transfer Capacitance
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz
155
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
17
31
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
43
68
ns
tf
Turn–Off Fall Time
VDD = 20 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
14
25
ns
Qg
Total Gate Charge
35
49
nC
Qgs
Gate–Source Charge
7.8
nC
Qgd
Gate–Drain Charge
VDS = 20 V, ID = 11 A,
VGS = 4.5 V
8.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μs, Duty Cycle < 2.0%
3.Starting TJ = 25
oC, L = 3mH,I
D = 11A, VDD = 40V, VGS = 10V


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