FDS2670 datasheet(4/6 Pages) FAIRCHILD

No de pièce	FDS2670

Description	200V N-Channel PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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4 / 6 page

FDS2670 Rev C1(W)

Typical Characteristics

0

5

10

15

20

0246

8

10

VDS, DRAIN-SOURCE VOLTAGE (V)

6.0V

6.5V

5.5V

VGS = 10V

0.8

1

1.2

1.4

1.6

0

4

8

12

16

20

ID, DRAIN CURRENT (A)

VGS = 5.5V

6.0V

10.0V

6.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0

0.5

1

1.5

2

2.5

-50

-25

0

255075

100

125

150

TJ, JUNCTION TEMPERATURE (

o

C)

ID = 3.0A

VGS = 10V

0

0.1

0.2

0.3

0.4

4

567

89

10

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 1.5 A

TA = 125

o

C

TA = 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

6

12

18

24

30

3

456

78

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125

o

C

25

o

C

-55

o

C

VDS = 15V

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125

o

C

25

o

C

-55

o

C

VGS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Numéro de pièce similaire - FDS2670

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