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FDN352AP Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN352AP
Description  Single P-Channel, PowerTrench MOSFET
Download  5 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN352AP Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDN352AP Datasheet HTML 1Page - Fairchild Semiconductor FDN352AP Datasheet HTML 2Page - Fairchild Semiconductor FDN352AP Datasheet HTML 3Page - Fairchild Semiconductor FDN352AP Datasheet HTML 4Page - Fairchild Semiconductor FDN352AP Datasheet HTML 5Page - Fairchild Semiconductor  
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FDN352AP Rev. C1
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins RθJC is guaranteed by design while RθJA is determined by the user’s board design.
(a) RθJA = 250°C/W when mounted on a 0.02 in
2 pad of 2oz. copper.
(b) RθJA = 270°C/W when mounted on a 0.001 in
2 pad of 2oz. copper.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature Coefficient
ID = –250 µA, Referenced to 25°C
–17
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±25 V, VDS = 0 V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–0.8
–2.0
–2.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.1 A
VGS = –4.5 V, ID = –1.1 A, TJ = 125°C
150
250
330
180
300
400
m
gFS
Forward Transconductance
VDS = –5 V, ID = –0.9 A
2.0
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = –15 V, VGS = 0 V, f = 1.0 MHz
150
pF
Coss
Output Capacitance
40
pF
Crss
Reverse Transfer Capacitance
20
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
VDD = –10 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
48
ns
tr
Turn–On Rise Time
15
28
ns
td(off)
Turn–Off Delay Time
10
18
ns
tf
Turn–Off Fall Time
12
ns
Qg
Total Gate Charge
VDS = –10V, ID = –0.9 A,
VGS = –4.5 V
1.4
1.9
nC
Qgs
Gate–Source Charge
0.5
nC
Qgd
Gate–Drain Charge
0.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –0.42 A
(Note 2)
–0.8
–1.2
V
trr
Diode Reverse Recovery Time
IF = –3.9 A,
dIF/dt = 100 A/µs
17
ns
Qrr
Diode Reverse Recovery Charge
7
nC


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