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FDN352AP Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FDN352AP
Description  Single P-Channel, PowerTrench MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN352AP Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
August 2005
FDN352AP Rev. C1
FDN352AP
Single P-Channel, PowerTrench® MOSFET
Features
■ –1.3 A, –30V
RDS(ON) = 180 mΩ @ VGS = –10V
–1.1 A, –30V
RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low
RDS(ON).
■ High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
■ Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current
– Continuous
(Note 1a)
–1.3
A
– Pulsed
–10
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
Device Marking
Device
Reel Size
Tape width
Quantity
52AP
FDN352AP
7’’
8mm
3000 units
G
SuperSOT™-3
G
S
D
D
G
S


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