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FDN352AP_0508 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN352AP_0508 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDN352AP Rev. C1 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins RθJC is guaranteed by design while RθJA is determined by the user’s board design. (a) RθJA = 250°C/W when mounted on a 0.02 in 2 pad of 2oz. copper. (b) RθJA = 270°C/W when mounted on a 0.001 in 2 pad of 2oz. copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –17 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.8 –2.0 –2.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –1.3 A VGS = –4.5 V, ID = –1.1 A VGS = –4.5 V, ID = –1.1 A, TJ = 125°C 150 250 330 180 300 400 m Ω gFS Forward Transconductance VDS = –5 V, ID = –0.9 A 2.0 S Dynamic Characteristics Ciss Input Capacitance VDS = –15 V, VGS = 0 V, f = 1.0 MHz 150 pF Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 48 ns tr Turn–On Rise Time 15 28 ns td(off) Turn–Off Delay Time 10 18 ns tf Turn–Off Fall Time 12 ns Qg Total Gate Charge VDS = –10V, ID = –0.9 A, VGS = –4.5 V 1.4 1.9 nC Qgs Gate–Source Charge 0.5 nC Qgd Gate–Drain Charge 0.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 A (Note 2) –0.8 –1.2 V trr Diode Reverse Recovery Time IF = –3.9 A, dIF/dt = 100 A/µs 17 ns Qrr Diode Reverse Recovery Charge 7 nC |
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