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FDN352AP_0508 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN352AP_0508 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page 3 www.fairchildsemi.com FDN352AP Rev. C1 Typical Characteristics 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 246 8 10 -I D, DRAIN CURRENT (A) V GS = -4.0V -10V -6.0V -5.0V -7.0V -4.5V -8.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC) I D = -0.9A V GS = -10V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 24 68 10 -V GS, GATE TO SOURCE VOLTAGE (V) I D = -0.45A T A = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 12 34 56 78 -V GS , GATE TO SOURCE VOLTAGE (V) T A = -55 oC 25 oC 125 oC V DS = -5V 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 0 2 4 6 8 10 0123 45 -V DS, DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -4.5V -3.5V -3.0V -6.0V -4.0V |
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Description similaire - FDN352AP_0508 |
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