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FDN336P Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN336P Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = -250 µA -20 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = -250 µA, Referenced to 25 oC -16 mV / o C I DSS Zero Gate Voltage Drain Current V DS = -16 V, VGS = 0 V -1 µA T J = 55°C -10 µA I GSSF Gate - Body Leakage, Forward V GS = 8 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -8 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = -250 µA, Referenced to 25 oC 3 mV / oC R DS(ON) Static Drain-Source On-Resistance V GS = -4.5 V, ID = -1.3 A 0.122 0.2 Ω T J =125°C 0.18 0.32 V GS = -2.5 V, I D = -1.1 A 0.19 0.27 I D(ON) On-State Drain Current V GS = -4.5 V, VDS = -5 V -5 A g FS Forward Transconductance V DS = -4.5 V, ID = -2 A 4 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = -10 V, VGS = 0 V, f = 1.0 MHz 330 pF C oss Output Capacitance 80 pF C rss Reverse Transfer Capacitance 35 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DD = -5 V, ID = -0.5 A, V GS = -4.5 V, RGEN = 6 Ω 7 15 ns t r Turn - On Rise Time 12 22 ns t D(off) Turn - Off Delay Time 16 26 ns t f Turn - Off Fall Time 5 12 ns Q g Total Gate Charge V DS = -10 V, ID = - 2 A, V GS = -4.5 V 3.6 5 nC Q gs Gate-Source Charge 0.8 nC Q gd Gate-Drain Charge 0.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current -0.42 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = -0.42 A (Note) -0.7 -1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDN336P Rev.D a. 250 oC/W when mounted on a 0.02 in 2 pad of 2oz Cu. b. 270 oC/W when mounted on a 0.001 in 2 pad of 2oz Cu. |
Numéro de pièce similaire - FDN336P |
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Description similaire - FDN336P |
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