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FDN336P Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN336P Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page January 2005 ©2005 Fairchild Semiconductor Corporation FDN306P Rev D FDN336P Single P-Channel 2.5V Specified PowerTrench ® MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion. Features • –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V RDS(ON) = 0.27 Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOT TM -3 provides low R DS(ON) and 30% higher power handling capability than SOT23 in the same footprint G D S SuperSOT -3 TM D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) – 1.3 A – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7’’ 8mm 3000 units |
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