FDD6637_06 datasheet(5/8 Pages) FAIRCHILD

No de pièce	FDD6637

Description	35V P-Channel PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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5 / 8 page

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Typical Characteristics

0

2

4

6

8

10

0

10

20

30

40

50

Qg, GATE CHARGE (nC)

ID = -14A

VDS = 10V

20V

30V

0

800

1600

2400

3200

0

5

10

15

20

25

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Ciss

Crss

Coss

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

0.01

0.1

1

10

100

1000

0

1

10

100

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

1s

100ms

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 96

o

C/W

TA = 25

o

C

10ms

1ms

100µs

10s

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

RθJA = 96°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

RθJA = 96°C/W

TA = 25°C

1

10

100

1000

0.001

0.01

0.1

1

10

tAV, TIME IN AVANCHE(ms)

TJ = 25

o

C

Figure 11. Single Pulse Maximum Peak

Current

Figure 12. Unclamped Inductive

Switching Capability

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