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IRFB61N15DPBF Fiches technique(PDF) 4 Page - International Rectifier

No de pièce IRFB61N15DPBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFB61N15DPBF Fiches technique(HTML) 4 Page - International Rectifier

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IRFB61N15DPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0
20
40
60
80
100
120
140
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
37A
V
= 30V
DS
V
= 75V
DS
V
= 120V
DS
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec


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