FCA47N60 datasheet(1/10 Pages) FAIRCHILD

No de pièce	FCA47N60

Description	new generation of high voltage MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FCH47N60 / FCA47N60 Rev.B

SuperFETTM

December 2006

FCH47N60 / FCA47N60

Features

•650V @TJ = 150°C

• Typ. Rds(on)=0.058

Ω

• Ultra low gate charge (typ. Qg=210nC)

• Low effective output capacitance (typ. Coss.eff=420pF)

• 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored

to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

G

S

D

TO-247

FDH Series

GS

D

TO-3P

FDA Series

D

G

S

Symbol

Parameter

FCH47N60

FCA47N60

Unit

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

47

29.7

A

IDM

Drain Current

- Pulsed

(Note 1)

141

A

VGSS

Gate-Source voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

1800

mJ

IAR

Avalanche Current

(Note 1)

47

A

EAR

Repetitive Avalanche Energy

(Note 1)

41.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation

(TC = 25°C)

- Derate above 25

°C

417

3.33

W

W/

°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Typ.

Max.

Unit

RθJC

Thermal Resistance, Junction-to-Case

--

0.3

°C/W

RθCS

Thermal Resistance, Case-to-Sink

0.24

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

--

41.7

°C/W

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