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BCP52 Datasheet(Fiches technique) 2 Page - Fairchild Semiconductor

Numéro de pièce BCP52
Description  PNP General Purpose Amplifier
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BCP52 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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Typical Characteristics
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 060V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
µA, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
µA, I
C = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125
°C
100
10
nA
µA
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
10
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 5.0 mA, VCE = 2.0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
25
40
25
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 500 mA, VCE = 2.0 V
1.0
V
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Emitter Saturation
Voltage vs Collector Current
0.01
0.1
1
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
I
- COLLE CTOR CURRENT (A)
C
β = 10
125 °C
- 40 °C
25 °C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
0
100
200
300
400
I
- COLLECTOR CURRENT (A)
- 40 °C
25 °C
C
V
= 5V
CE
125 °C


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