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2N4400 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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2N4400 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 0 100 200 300 400 500 I - COLLECTOR CURRENT (mA) C 125 °C 25 °C - 40 °C V = 5V CE Collector-Emitter Saturation Voltage vs Collector Current 110 100 500 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) 25 °C C β = 10 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C β = 10 25 °C 125 °C - 40 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5V CE 25 °C 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 100 500 T - AMBIENT TEMPERATURE ( C) A V = 40V CB ° Emitter Transition and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 100 4 8 12 16 20 REVERSE BIAS VOLTAGE (V) f = 1 MHz C ob C NPN General Purpose Amplifier te (continued) |
Numéro de pièce similaire - 2N4400_01 |
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Description similaire - 2N4400_01 |
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