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2N3859A Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce 2N3859A
Description  NPN General Purpose Amplifier
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3859A Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
- Continuous
500
mA
TJ, TST
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IB = 0
60
V
BV(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
60
V
BV(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
6.0
V
ICBO
Collector Cut-off Current
VCB = 18V, IE = 0
0.5
µA
IEBO
Emitter Cut-off Current
VEB = 4.0V, IC = 0
0.5
µA
On Characteristics *
hFE
DC Current Gain
VCE= 1.0V, IC = 1.0mA
VCE= 1.0V, IC = 1.0mA
75
100
200
Small Signal Characteristics
Cob
Current Gain Bandwidth Product
VCB = 10V, f = 1.0MHz
4
pF
fT
Output Capacitance
IC = 2.0mA, VCE = 10V
90
250
MHz
rb’Cc
Collector-Base Time Constant
VCE = 10V, IC = 2.0mA
f = 31.9MHz
150
pS
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
2N3859A
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 10.
• See PN100 for characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1


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