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2N3859A Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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2N3859A Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 60 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6.0 V ICBO Collector Cut-off Current VCB = 18V, IE = 0 0.5 µA IEBO Emitter Cut-off Current VEB = 4.0V, IC = 0 0.5 µA On Characteristics * hFE DC Current Gain VCE= 1.0V, IC = 1.0mA VCE= 1.0V, IC = 1.0mA 75 100 200 Small Signal Characteristics Cob Current Gain Bandwidth Product VCB = 10V, f = 1.0MHz 4 pF fT Output Capacitance IC = 2.0mA, VCE = 10V 90 250 MHz rb’Cc Collector-Base Time Constant VCE = 10V, IC = 2.0mA f = 31.9MHz 150 pS Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1. Emitter 2. Collector 3. Base 1 |
Numéro de pièce similaire - 2N3859A_02 |
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Description similaire - 2N3859A_02 |
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