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2N3704 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce 2N3704
Description  NPN General Purpose Amplifier
Télécharger  3 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3704 Datasheet(HTML) 1 Page - Fairchild Semiconductor

  2N3704_02 Datasheet HTML 1Page - Fairchild Semiconductor 2N3704_02 Datenblatt HTML 2Page - Fairchild Semiconductor 2N3704_02 Datenblatt HTML 3Page - Fairchild Semiconductor  
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©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
- Continuous
500
mA
TJ, TST
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
30
V
BV(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
50
V
BV(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
5.0
V
ICBO
Collector Cut-off Current
VCB = 20V, IE = 0
100
nA
IEBO
Emitter Cut-off Current
VEB = 3.0V, IC = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE= 5.0V, IC = 50mA
100
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 100mA, IB = 5.0mA
0.5
1.0
V
VBE(on)
Collector-Emitter On Voltage
VCE= 2.0V, IC = 100mA
0.6
V
Small Signal Characteristics
Cob
Current Gain Bandwidth Product
VCB = 10V, f = 1.0MHz
12
pF
fT
Output Capacitance
IC = 50mA, VCE = 2.0V
100
MHz
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
2N3704
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 10.
• See PN100 for characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1


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