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SBR2U30P1 Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce SBR2U30P1
Description  2.0A SBR Super Barrier Rectifier
Download  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

SBR2U30P1 Fiches technique(HTML) 1 Page - Diodes Incorporated

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SBR2U30P1
2.0A SBR
®
Super Barrier Rectifier
PowerDI™123
Features
Mechanical Data
Case: PowerDI™123
Case Material: Molded Plastic, “Green” Molding
compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity Indicator: Cathode Band
Terminals: Matte Tin Finish annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Interlocking Clip Design for
High Surge Current Capacity
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
±16KV ESD Protection (HBM, 3B)
±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q 101 Standards for High Reliability
Maximum Ratings @ T
A = 25ºC unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30
V
RMS Reverse Voltage
VR(RMS)
21
V
Average Rectified Output Current (See Figure 1)
IO
2.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
75
A
Non-Repetitive Avalanche Energy
(TJ = 25°C, IAS = 5A, L = 8.5 mH)
EAS
105
mJ
Repetitive Peak Avalanche Energy
(TP = 1µs, Tj = 25°C)
PARM
1100
W
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
RӨJS
RӨJA
5
178
123
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ºC
Notes:
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical RӨJS calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
__________
SBR is a registered trademark of Diodes Incorporated.
PowerDI is a trademark of Diodes Incorporated.
SBR2U30P1 Rev. 4 - 2
1 of 4
www.diodes.com
January 2007
© Diodes Incorporated


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