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DZT951 Datasheet(Fiches technique) 2 Page - Diodes Incorporated

Numéro de pièce DZT951
Description  PNP SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZT951 Datasheet(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @T
A = 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
-100
?
?
V
IC = -100?A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
?
?
V
IC = -10mA*, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
?
?
V
IE = -100?A, IC = 0
Collector Cutoff Current
ICBO
?
?
-50
-1
nA
?A
VCB = -80V, IE = 0
VCB = -80V, IE = 0, TA = 100C
Emitter Cutoff Current
IEBO
?
?
-10
nA
VEB = - 6V, IC = 0
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
VCE(SAT)
?
?
?
?
-20
-85
-155
-370
-50
-140
-210
-460
mV
IC = -100mA, IB = -10mA*
I
B
C = -1A, IBB = -100mA*
IC = -2A, IB = -200mA*
I
B
C = -5A, IBB = -500mA*
Base-Emitter Saturation Voltage
VBE(SAT)
?
-1080
-1240
mV
IC = -5A, IB = -500mA*
B
Base-Emitter Turn-On Voltage
VBE(ON)
?
-935
-1070
mV
ICE = -5A, VCE = -1V*
DC Current Gain
hFE
100
100
75
10
200
200
90
25
?
300
?
?
?
IC = -10mA, VCE = -1V*
IC = -2A, VCE = -1V*
IC = -5A, VCE = -1V*
IC = -10A, VCE = -1V*
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
?
120
?
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
?
74
?
pF
VCB = -10V, f = 1MHz
SWITCHING CHARACTERISTICS
Switching Times
ton
toff
?
?
82
350
?
?
ns
IC = -2A, IB1 = -200mA
IB2 = +200mA, VCC = -10V
*
Measured under pulsed conditions. Pulse width = 300
?s. Duty cycle ?2%
Typical Characteristics @T
amb = 25C unless otherwise specified
Fig. 1 Power Dissipation VS. Ambient Temperature (Note 3)
Fig. 2 Collector Current vs. Collector Emitter Voltage
Notes:
3.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
DS30786 Rev. 3 - 2
2 of 4
www.diodes.com
DZT951
Diodes Incorporated


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