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DZT851-13 Datasheet(Fiches technique) 2 Page - Diodes Incorporated

Numéro de pièce DZT851-13
Description  NPN SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZT851-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
150
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
60
V
IC = 10mA*, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
6
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICBO
50
1
nA
μA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current
IEBO
10
nA
VEB = 6V, IC = 0
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
VCE(SAT)
50
100
170
375
mV
IC = 0.1A, IB = 5mA*
I
B
C = 1A, IBB = 50mA*
IC = 2A, IB = 50mA*
I
B
C = 6A, IBB = 300mA*
Base-Emitter Saturation Voltage
VBE(SAT)
1200
mV
IC = 6A, IB = 300mA*
B
Base-Emitter Turn-On Voltage
VBE(ON)
1150
mV
ICE = 6A, VCE = 1V*
DC Current Gain
hFE
100
100
75
25
300
IC = 10mA, VCE = 1V*
IC = 2A, VCE = 1V*
IC = 5A, VCE = 1V*
IC = 10A, VCE = 1V*
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
130
MHz
IC = 100mA, VCE = 10V,
f = 50MHz
Output Capacitance
Cobo
45
pF
VCB = 10V, f = 1MHz
Switching Times
ton
toff
45
1100
ns
IC = 1A, IB1 = 100mA
IB2 = 100mA, VCC = 10V
*
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%
Typical Characteristics @T
amb = 25°C unless otherwise specified
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
Fig. 2 Collector Current vs. Collector Emitter Voltage
Notes:
3.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
DS30738 Rev. 3 - 2
2 of 4
www.diodes.com
DZT851
© Diodes Incorporated


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