September 1994

3

Philips Semiconductors

Product specification

NPN silicon planar epitaxial

microwave power transistor

LLE18150X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

45

V

collector-emitter voltage

30

V

collector-emitter voltage

open base

−

22

V

emitter-base voltage

open collector

−

3V

DC collector current

−

3A

input power

4W

total power dissipation

−

25

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; note 1

−

235

°C

Fig.2 Power derating curve.

0

50

100

200

10

0

MBD741

150

T

( C)

o

mb

Ptot

(W)

20

30