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LLE18150X Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce LLE18150X
Description  NPN silicon planar epitaxial microwave power transistor
Download  9 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LLE18150X Fiches technique(HTML) 3 Page - NXP Semiconductors

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September 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
45
V
VCER
collector-emitter voltage
RBE = 220 Ω−
30
V
VCEO
collector-emitter voltage
open base
22
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
3A
Pi
input power
f = 1.85 GHz; VCE = 24 V; class AB −
4W
Ptot
total power dissipation
Tmb =75 °C
25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2 Power derating curve.
0
50
100
200
10
0
MBD741
150
T
( C)
o
mb
Ptot
(W)
20
30


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