Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

LLE18150X Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce LLE18150X
Description  NPN silicon planar epitaxial microwave power transistor
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LLE18150X Fiches technique(HTML) 2 Page - NXP Semiconductors

  LLE18150X Datasheet HTML 1Page - NXP Semiconductors LLE18150X Datasheet HTML 2Page - NXP Semiconductors LLE18150X Datasheet HTML 3Page - NXP Semiconductors LLE18150X Datasheet HTML 4Page - NXP Semiconductors LLE18150X Datasheet HTML 5Page - NXP Semiconductors LLE18150X Datasheet HTML 6Page - NXP Semiconductors LLE18150X Datasheet HTML 7Page - NXP Semiconductors LLE18150X Datasheet HTML 8Page - NXP Semiconductors LLE18150X Datasheet HTML 9Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
September 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2.0 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common emitter class AB
amplifier.
PINNING - FO-229
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(
Ω)
Class AB (CW)
1.85
24
0.05
≥12
≥7.8
typ. 43
see Figs 6
and 7
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
1
2
3
Top view
e
c
b
MAM112
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.


Html Pages

1  2  3  4  5  6  7  8  9 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn