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KM110BH2430 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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KM110BH2430 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1996 Nov 08 4 Philips Semiconductors Preliminary specification 30 ° and 70° angle sensor hybrids KM110BH/2430; KM110BH/2470 CHARACTERISTICS Tamb =25 °C; VCC =5V; RL = 1.7 kΩ and a homogeneous magnetic field Hext = 100 kA/m in the sensitive layer of the KMZ sensor, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT α angle range: note 1 KM110BH/2430 −−15 to +15 − deg KM110BH/2470 −−35 to +35 − deg VO output voltage range: KM110BH/2430 linear; see Fig.4 − 0.5 to 4.5 − V KM110BH/2470 sinusoidal; see Fig.5 − 0.5 to 4.5 − V Vzero zero point voltage α =0°− 2.5 − V Voff zero point offset voltage: related to sinusoidal sensor characteristic; see Fig.5 KM110BH/2430 −±25 − mV KM110BH/2470 −±15 − mV αoff zero point offset angle related to hybrid edges; see Fig.7 − 1 3 deg S sensitivity: α =0°; note 2 KM110BH/2430 137 140 143 mV/deg KM110BH/2470 73 74.5 76 mV/deg P precision: −20 to +100 °C − KM110BH/2430 0.2 0.5 deg KM110BH/2470 0.5 1.2 deg FL deviation of linearity: note 3 KM110BH/2430 −±1 − % ⋅FS KM110BH/2470 −− − % ⋅FS Rp reproducibility α =0°; note 4 − <0.001 − deg Rs resolution α =0°; note 5 − <0.001 − deg FH hysteresis α =0°; note 6 − <0.05 − deg SPmax maximum angular speed: KM110BH/2430 − 60 − deg/ms KM110BH/2470 − 150 − deg/ms RL load resistance 1.7 −− k Ω CL load capacitance −− 10 nF Temperature coefficients ( −40 to +100 °C) TCVzero temperature coefficient of zero point voltage: KM110BH/2430 − 0.2 0.6 mV/K KM110BH/2470 − 0.1 0.3 mV/K TCS temperature coefficient of sensitivity −20 to 100 °C − 100 × 10−6 − K−1 |
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