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JC327 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce JC327
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

JC327 Fiches technique(HTML) 3 Page - NXP Semiconductors

  JC327 Datasheet HTML 1Page - NXP Semiconductors JC327 Datasheet HTML 2Page - NXP Semiconductors JC327 Datasheet HTML 3Page - NXP Semiconductors JC327 Datasheet HTML 4Page - NXP Semiconductors JC327 Datasheet HTML 5Page - NXP Semiconductors JC327 Datasheet HTML 6Page - NXP Semiconductors JC327 Datasheet HTML 7Page - NXP Semiconductors JC327 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 27
3
Philips Semiconductors
Product specification
PNP general purpose transistor
JC327
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit-board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
0.2
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−−−100 nA
IE = 0; VCB = −20 V; Tj = 150 °C
−−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −100 mA; VCE = −1V
JC327-25
160
400
hFE
DC current gain
IC = −500 mA; VCE = −1V
40
−−
VCEsat
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA
−−−700 mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −1 V; note 1
−−−1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
8
pF
fT
transition frequency
IC = −10 mA; VCE = −5V;
f = 100 MHz
80
−−
MHz


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