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JC327 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce JC327
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

JC327 Fiches technique(HTML) 2 Page - NXP Semiconductors

  JC327 Datasheet HTML 1Page - NXP Semiconductors JC327 Datasheet HTML 2Page - NXP Semiconductors JC327 Datasheet HTML 3Page - NXP Semiconductors JC327 Datasheet HTML 4Page - NXP Semiconductors JC327 Datasheet HTML 5Page - NXP Semiconductors JC327 Datasheet HTML 6Page - NXP Semiconductors JC327 Datasheet HTML 7Page - NXP Semiconductors JC327 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 27
2
Philips Semiconductors
Product specification
PNP general purpose transistor
JC327
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC337.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base; IC = −10 mA
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−500
mA
ICM
peak collector current
−−1A
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
625
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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