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MMBTA42 Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce MMBTA42
Description  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBTA42 Fiches technique(HTML) 1 Page - Diodes Incorporated

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MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBTA92)
Ideal for Low Power Amplification and Switching
Lead Free/RoHS Compliant (Note 4)
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method
208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Marking (See Page 2): K3M
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
C
B
H
G
D
K
E
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current (Note 1) (Note 3)
IC
500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
417
°C/W
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
300
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
300
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 200V, IE = 0
Collector Cutoff Current
IEBO
100
nA
VCE = 6.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
25
40
40
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 20mA, IB = 2.0mA
B
Base- Emitter Saturation Voltage
VBE(SAT)
0.9
V
IC = 20mA, IB = 2.0mA
B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
50
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power
dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead.
DS30062 Rev. 10 - 2
1 of 3
www.diodes.com
MMBTA42
© Diodes Incorporated
SPICE MODEL: MMBTA42


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