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MMBTA05 Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce MMBTA05
Description  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBTA05 Fiches technique(HTML) 1 Page - Diodes Incorporated

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MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBTA55 / MMBTA56)
Ideal for Low Power Amplification and Switching
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
MMBTA05 Marking (See Page 3): K1G, K1H
MMBTA06 Marking (See Page 3): K1G
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
E
B
C
3
12
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
Maximum Ratings @T
A = 25°C unless otherwise specified
Characteristic
Symbol
MMBTA05
MMBTA06
Unit
Collector-Base Voltage
VCBO
60
80
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
417
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CBO
60
80
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CEO
60
80
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 100μA, IC = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICBO
100
nA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICES
100
nA
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
100
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
V
IC = 100mA, IB = 10mA
B
Base-Emitter Saturation Voltage
VBE(SAT)
1.2
V
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 2.0V, IC = 10mA,
f = 100MHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30037 Rev. 10 - 2
1 of 3
www.diodes.com
MMBTA05 / MMBTA06
© Diodes Incorporated
SPICE MODEL: MMBTA05 MMBTA06


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