IRF530N datasheet(5/7 Pages) PHILIPS

No de pièce	IRF530N

Description	N-channel TrenchMOS transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF530N

Fig.13. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.14. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tAV);

unclamped inductive load

0

2

4

6

8

10

12

14

16

18

20

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

Source-Drain Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

175 C

VGS = 0 V

0.1

1

10

100

0.001

0.01

0.1

1

10

Avalanche time, tAV (ms)

Maximum Avalanche Current, IAS (A)

Tj prior to avalanche = 150 C

25 C

August 1999

5

Rev 1.100

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