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STQ-2016-3 Fiches technique(PDF) 3 Page - SIRENZA MICRODEVICES |
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STQ-2016-3 Fiches technique(HTML) 3 Page - SIRENZA MICRODEVICES |
3 / 16 page 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com 3 EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator 0 100 200 300 400 500 600 700 800 1.5 1 0.5 0 0.5 1 1.5 Sa mp les Vp Vpp V pp Diff , 2Vpp ⋅ Plot of Single-Ended W-CDMA Baseband Signal (BBIP) **Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition: Product Specifications – Baseband Modulation Input Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* Baseband Frequency Input -3dB bandwidth, baseband inputs termi- nated in 50 ohms MHz DC 500 I Baseband Input Resistance per pin kohms 4.4 D Baseband Input Capacitance per pin pF 0.5 D Product Specifications – Shut-Down Input (Pin 7) Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* Shut-Down Current mA 42 60 A Shut-Down Attenuation dB 60 D Shut-Down Pin Resistance @ 1MHz kohm 11.9 D Shut-Down Pin Capacitance @ 1MHz pF 5.2 D Shut-down Control Voltage Thresholds Shut-down disabled (normal operation) V 3.75 Vcc I Shut-down enabled V 0.0 1.5 I Shut-Down Settling Time ns <450 D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100 % tested through correlated CW parameter, I = Device input specification. Product Specifications – LO Input Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. Type* LO Frequency MHz 700 2500 I LO Drive Level Recommended/Optimum Levels dBm -1 +3 +7 I LO Port Return Loss matched to 50 Ω (see schematic on page 12) dB 16 D |
Numéro de pièce similaire - STQ-2016-3 |
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Description similaire - STQ-2016-3 |
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