Moteur de recherche de fiches techniques de composants électroniques |
|
CA3127M Fiches technique(PDF) 2 Page - Intersil Corporation |
|
CA3127M Fiches technique(HTML) 2 Page - Intersil Corporation |
2 / 9 page 2 FN662.5 June 5, 2006 CA3127 Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Operating Conditions Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C Thermal Resistance (Typical, Note 2) θJA (°C/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Maximum Power Dissipation, PD (Any One Transistor). . . . . .85mW Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Packages) . . . . . . . 150°C Maximum Storage Temperature Range . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage IC = 10µA, IE = 0 20 32 - V Collector-to-Emitter Breakdown Voltage IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown-Voltage IC1 = 10µA, IB = 0, IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage (Note 3) IE = 10µA, IC = 0 4 5.7 - V Collector-Cutoff-Current VCE = 10V IB = 0 - - 0.5 µA Collector-Cutoff-Current VCB = 10V, IE = 0 - - 40 nA DC Forward-Current Transfer Ratio VCE = 6V IC = 5mA 35 88 - IC = 1mA 40 90 - IC = 0.1mA 35 85 - Base-to-Emitter Voltage VCE = 6V IC = 5mA 0.71 0.81 0.91 V IC = 1mA 0.66 0.76 0.86 V IC = 0.1mA 0.60 0.70 0.80 V Collector-to-Emitter Saturation Voltage IC = 10mA, IB = 1mA - 0.26 0.50 V Magnitude of Difference in VBE Q1 and Q2 Matched VCE = 6V, IC = 1mA -0.5 5 mV Magnitude of Difference in IB -0.2 3 µA DYNAMIC CHARACTERISTICS Noise Figure f = 100kHz, RS = 500Ω, IC = 1mA - 2.2 - dB Gain-Bandwidth Product VCE = 6V, IC = 5mA - 1.15 - GHz Collector-to-Base Capacitance VCB = 6V, f = 1MHz - See Fig. 5 -pF Collector-to-Substrate Capacitance VCI = 6V, f = 1MHz - - pF Emitter-to-Base Capacitance VBE = 4V, f = 1MHz - - pF Voltage Gain VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA - 28 - dB Power Gain Cascode Configuration f = 100MHz, V+ = 12V, IC = 1mA 27 30 - dB Noise Figure -3.5 - dB CA3127 |
Numéro de pièce similaire - CA3127M |
|
Description similaire - CA3127M |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |