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MMBT2222 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce MMBT2222
Description  NPN General Purpose Amplifier
Download  4 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

MMBT2222 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
- Continuous
0.6
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 50V, IE = 0
VCB = 50V, IE = 0, Ta = 125°C
10
10
µA
µA
IEBO
Emitter Cutoff Current
VEB = 3.0V, IC = 0
10
nA
On Characteristics
hFE
DC Current Gain
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 1.0V *
IC = 500mA, VCE = 10V *
35
50
75
100
50
30
300
VCE(sat)
Collector-Emitter Saturation Voltage *
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
0.4
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150mA, IB = 15V
IC = 500mA, IB = 50V
1.3
2.6
V
MMBT2222
NPN General Purpose Amplifier
• Sourced from process 19.
SOT-23
B
E
C
Mark: 1B


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