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FQPF6N40CF Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FQPF6N40CF Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQP6N40CF FQP6N40CF TO-220 - - 50 FQPF6N40CF FQPF6N40CF TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA400 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.54 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 µA VDS = 320 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A -- 0.9 1.1 Ω gFS Forward Transconductance VDS = 40 V, ID = 3 A (Note 4) -- 4.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 480 625 pF Coss Output Capacitance -- 80 105 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 200 V, ID = 6 A, RG = 25 Ω (Note 4, 5) -- 13 35 ns tr Turn-On Rise Time -- 65 140 ns td(off) Turn-Off Delay Time -- 21 55 ns tf Turn-Off Fall Time -- 38 85 ns Qg Total Gate Charge VDS = 320 V, ID = 6 A, VGS = 10 V (Note 4, 5) -- 16 20 nC Qgs Gate-Source Charge -- 2.3 -- nC Qgd Gate-Drain Charge -- 8.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs (Note 4) -- 70 -- ns Qrr Reverse Recovery Charge -- 0.12 -- µC |
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